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Paper Titles
Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates
p.581
Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC
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Photoluminescence Study of C-H and C-D Centers in 4H SiC
p.589
Optical Characterization of Full SiC Wafer
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Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
p.597
Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research
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Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap Frequencies
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Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC
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Raman Scattering by Coupled Phonon-Plasmon Modes
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Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

597-600

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.597

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Online since:

June 2004

Authors:

Alexander A. Lebedev, Anatoly M. Strel'chuk, Alexey N. Kuznetsov, N.S. Savkina

Keywords:

2DEG, Electroluminescence, Exiton, Heterojunction, Quantum Well, SiC Polytypes, Sublimation Epitaxy

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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References

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