Photoluminescence Study of C-H and C-D Centers in 4H SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

589-592

Citation:

S. Bai et al., "Photoluminescence Study of C-H and C-D Centers in 4H SiC", Materials Science Forum, Vols. 457-460, pp. 589-592, 2004

Online since:

June 2004

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[1] W. J. Choyke, R. P. Devaty, S. Bai, A. Gali, P. Deák, and G. Pensl, Mater. Sci. Forum 389-393 (2002), p.585.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.585

[2] A. Gali, B. Aradi, D. Heringer, W. J. Choyke, R. P. Devaty, and S. Bai, Appl. Phys. Lett. 80 (2002) p.237.

[3] S. Bai, W. J. Choyke, and R. P. Devaty, Mater. Sci. Forum (2004), (this conference).

[4] W. J. Choyke and Lyle Patrick, Phys. Rev. B 9 (1974) p.3214.

[5] P. J. Dean and W. J. Choyke, Advances in Physics, 26 (1977) p.1.

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