Photoluminescence Study of C-H and C-D Centers in 4H SiC

Song Bai; Fei Yan; Robert P. Devaty; Wolfgang J. Choyke; R. Grötzschel; Günter Wagner; Mike F. MacMillan

doi:10.4028/www.scientific.net/MSF.457-460.589

Paper Titles

Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells
p.573

Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers
p.577

Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates
p.581

Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC
p.585

Photoluminescence Study of C-H and C-D Centers in 4H SiC
p.589

Optical Characterization of Full SiC Wafer
p.593

Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
p.597

Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research
p.601

Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap Frequencies
p.605

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Photoluminescence Study of C-H and C-D Centers in 4H SiC

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

589-592

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.589

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Online since:

June 2004

Authors:

Song Bai, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke, R. Grötzschel, Günter Wagner, Mike F. MacMillan

Keywords:

Deuterium, Hydrogen, Ion Implantation, Morse Potential, Optical Quenching

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References

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DOI: 10.4028/www.scientific.net/msf.389-393.585

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