Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

581-584

Citation:

B.J. Skromme et al., "Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates ", Materials Science Forum, Vols. 457-460, pp. 581-584, 2004

Online since:

June 2004

Export:

Price:

$38.00

[1] B.J. Skromme, K. Palle, C.D. Poweleit, L.R. Bryant, W.M. Vetter, M. Dudley, K. Moore and T. Gehoski: Mater. Sci. Forum Vol. 389-393 (2002) p.455.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.455

[2] R.S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen and L.J. Brillson: Appl. Phys. Lett. Vol. 79 (2001) p.3056; and Mater. Sci. Forum Vol. 389-393 (2002) p.451.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.451

[3] J.Q. Liu, H.J. Chung, T. Kuhr, Q. Li and M. Skowronski: Appl. Phys. Lett. Vol. 80 (2002) p.2111.

[4] T.A. Kuhr, J. Liu, H.J. Chung, M. Skowronski and F. Szmulowicz: J. Appl. Phys. Vol. 92 (2002) p.5863.

[5] B.J. Skromme, K.C. Palle, M.K. Mikhov, H. Meidia, S. Mahajan, X.R. Huang, W.M. Vetter, M. Dudley, K. Moore, S. Smith and T. Gehoski: MRS Proc. Vol. 742 (2003) p. K3. 4. 1.

DOI: https://doi.org/10.1557/proc-742-k3.4

[6] M.S. Miao, S. Limpijumnong and W.R.L. Lambrecht: Appl. Phys. Lett. Vol. 79 (2001) p.4360.

[7] A. Fissel, U. Kaiser, B. Schröter, W. Richter and F. Bechstedt: Appl. Surf. Sci. Vol. 184 (2001) p.37.

[8] H. Iwata, U. Lindefelt, S. Öberg and P.R. Briddon: J. Appl. Phys. Vol. 93 (2003) p.1577.

[9] A. Qteish, V. Heine and R.J. Needs: Phys. Rev. B Vol. 45 (1992) p.6534.

[10] A. Henry, A. Ellison, U. Forsberg, B. Magnusson, G. Pozina and E. Janzén: Mater. Sci. Forum Vol. 389-393 (2002) p.593.

[11] S. Nakashima and H. Harima: Phys. Stat. Sol. (a) Vol. 162 (1997).