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Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers
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Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates
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Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC
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Photoluminescence Study of C-H and C-D Centers in 4H SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Characterization of Double Stacking Faults Induced...

Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

581-584

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.581

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Online since:

June 2004

Authors:

B.J. Skromme, M.K. Mikhov, L. Chen, G. Samson, Rong Jun Wang, Can Hua Li, I. Bhat

Keywords:

Electrostatic Force Microscopy, Heavy Doping, Oxidation, Photoluminescence (PL), Polytype Transformation, Raman Scattering, Secondary Electron Imaging, Stacking Fault

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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