Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers

Takeshi Tawara; Hidekazu Tsuchida; Syunsuke Izumi; Isaho Kamata; Kunikaza Izumi

doi:10.4028/www.scientific.net/MSF.457-460.565

Paper Titles

SiC Studied Via LEEN and Cathodoluminescence Spectroscopy
p.543

Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC
p.549

Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide
p.555

Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC
p.561

Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
p.565

Photoluminescence Mapping of a SiC Wafer in Device Processing
p.569

Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells
p.573

Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers
p.577

Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates
p.581

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Evaluation of Free Carrier Lifetime and Deep...

Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

565-568

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.565

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Online since:

June 2004

Authors:

Takeshi Tawara, Hidekazu Tsuchida, Syunsuke Izumi, Isaho Kamata, Kunikaza Izumi

Keywords:

Carrier Lifetime, Deep Level, Time-Resolved Photoluminescence

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References

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