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Paper Titles
Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes
p.533
Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
p.537
SiC Studied Via LEEN and Cathodoluminescence Spectroscopy
p.543
Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC
p.549
Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide
p.555
Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC
p.561
Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
p.565
Photoluminescence Mapping of a SiC Wafer in Device Processing
p.569
Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells
p.573

Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide

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Materials Science Forum (Volumes 457-460)

Pages:

555-560

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.555

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Online since:

June 2004

Authors:

Sylvie Contreras, Julien Pernot

Keywords:

Electron Mobility, Hall-Effect, Nitrogen Doping, Parallel Conduction, Stacking Fault

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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