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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Stacking Fault Formation Sites and Growth in...

Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

533-536

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.533

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Online since:

June 2004

Authors:

Robert E. Stahlbush, Mark E. Twigg, Kenneth G. Irvine, Joseph J. Sumakeris, T. Paul Chow, Peter A. Losee, Lin Zhu, Yi Tang, W. Wang

Keywords:

Dislocation, Nucleation Site, PiN Diode, Stacking Fault, V_f Degradation

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[8] M.E. Twigg, R.E. Stahlbush, M. Fatemi, S.D. Arthur, J.B. Fedison, J.B. Tucker, and S. Wang, submitted to J. Elec. Mater. 100 µm 37 73 87 100 µm100 µm 37 73 87 Fig. 2. Expansion of parallelogram shaped stacking fault. The two fainter partial dislocations are different from the two brighter ones and the SF expands only by movement of the brighter partial dislocations.

DOI: 10.1007/s11664-004-0205-8