Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates

Ekaterina N. Kalabukhova; S.N. Lukin; D.V. Savchenko; W.C. Mitchel; William D. Mitchell

doi:10.4028/www.scientific.net/MSF.457-460.501

Paper Titles

Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation
p.485

Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC
p.489

Defects in He⁺ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
p.493

The Influence of Recombination-Induced Migration of Hydrogen on the Formation of V_Si-H Complexes in SiC
p.497

Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates
p.501

Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
p.505

Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma
p.509

Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy
p.513

Annealing Study on Radiation-Induced Defects in 6H-SiC
p.517

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Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates

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Materials Science Forum (Volumes 457-460)

Pages:

501-504

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.501

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Online since:

June 2004

Authors:

Ekaterina N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, William D. Mitchell

Keywords:

EPR, Hall-Effect, Intrinsic Defect, Semi-Insulating SiC

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References

[1] V.V. Konovalov, M.E. Zvanut, J. van Tol: Phys. Rev. B Vol. 68 (2003) p.012102.

Google Scholar

[2] W.E. Carlos, E.R. Glaser, B.V. Shanabrook: Proceedings of the ICDS22 (Physica B) accepted.

Google Scholar

[3] N.T. Son, B. Magnusson, E. Janzen : Appl. Phys. Lett. Vol. 81 (2002), p.3945.

Google Scholar

[4] P.J. Macfarlane, M.E. Zvanut : J. Vac. Sci. Technol. B Vol. 17 (1999), p.1627.

Google Scholar

[5] E.N. Kalabukhova, S.N. Lukin, W.C. Mitchel, A. Saxler, R.L. Jones : Physica B Vol. 308-310 (2001), p.698.

DOI: 10.1016/s0921-4526(01)00872-9

Google Scholar

[6] E.N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel : proceedings of the ICDS22 (Physica B) accepted.

Google Scholar

[7] E.N. Kalabukhova, S.N. Lukin, Yu.S. Gromovoy, E.N. Mokhov : Phys. Sol. St. Vol. 40, (1998), p.1653.

Google Scholar

[8] L. Torpo, M. Marlo, T.E.M. Staab, R.M. Nieminen: J. Phys.: Condens. Matter Vol. 13 (2001), p.6203.

Google Scholar

[9] A. Zywietz, J. Furthmuller, F. Bechstadt: Phys. Rev. B Vol. 59 (1999), p.15166.

Google Scholar