Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

501-504

DOI:

10.4028/www.scientific.net/MSF.457-460.501

Citation:

E. N. Kalabukhova et al., "Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates ", Materials Science Forum, Vols. 457-460, pp. 501-504, 2004

Online since:

June 2004

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$35.00

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