Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

501-504

Citation:

E. N. Kalabukhova et al., "Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates ", Materials Science Forum, Vols. 457-460, pp. 501-504, 2004

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June 2004

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[1] V.V. Konovalov, M.E. Zvanut, J. van Tol: Phys. Rev. B Vol. 68 (2003) p.012102.

[2] W.E. Carlos, E.R. Glaser, B.V. Shanabrook: Proceedings of the ICDS22 (Physica B) accepted.

[3] N.T. Son, B. Magnusson, E. Janzen : Appl. Phys. Lett. Vol. 81 (2002), p.3945.

[4] P.J. Macfarlane, M.E. Zvanut : J. Vac. Sci. Technol. B Vol. 17 (1999), p.1627.

[5] E.N. Kalabukhova, S.N. Lukin, W.C. Mitchel, A. Saxler, R.L. Jones : Physica B Vol. 308-310 (2001), p.698.

DOI: https://doi.org/10.1016/s0921-4526(01)00872-9

[6] E.N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel : proceedings of the ICDS22 (Physica B) accepted.

[7] E.N. Kalabukhova, S.N. Lukin, Yu.S. Gromovoy, E.N. Mokhov : Phys. Sol. St. Vol. 40, (1998), p.1653.

[8] L. Torpo, M. Marlo, T.E.M. Staab, R.M. Nieminen: J. Phys.: Condens. Matter Vol. 13 (2001), p.6203.

[9] A. Zywietz, J. Furthmuller, F. Bechstadt: Phys. Rev. B Vol. 59 (1999), p.15166.

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