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Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
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Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors
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Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC
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Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation
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Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC
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Defects in He⁺ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
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The Influence of Recombination-Induced Migration of Hydrogen on the Formation of V_Si-H Complexes in SiC
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Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates
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Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Optically Induced Transitions among Point Defects...

Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

489-492

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.489

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Online since:

June 2004

Authors:

Mary Ellen Zvanut, V.V. Konovalov, W.C. Mitchel, William D. Mitchell

Keywords:

Doping, Electron Paramagnetic Resonance (EPR), EPR, Hall Measurement, High Purity, Point Defect, Semi-insulating (SI), Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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