Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC

Giovanni Alfieri; Edouard V. Monakhov; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/MSF.457-460.481

Paper Titles

EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC
p.465

Investigations of Possible Nitrogen Participation in the Z₁/Z₂ Defect in 4H-SiC
p.469

Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
p.473

Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors
p.477

Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC
p.481

Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation
p.485

Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC
p.489

Defects in He⁺ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
p.493

The Influence of Recombination-Induced Migration of Hydrogen on the Formation of V_Si-H Complexes in SiC
p.497

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Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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481-484

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.481

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Online since:

June 2004

Authors:

Giovanni Alfieri, Edouard V. Monakhov, Bengt Gunnar Svensson

Keywords:

4H-SiC, Deep Trap, DLTS, Electron Irradiation

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