Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

481-484

DOI:

10.4028/www.scientific.net/MSF.457-460.481

Citation:

G. Alfieri et al., "Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 481-484, 2004

Online since:

June 2004

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.