Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

481-484

Citation:

G. Alfieri et al., "Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 481-484, 2004

Online since:

June 2004

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