A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials

Alexander Mattausch; M. Bockstedte; Oleg Pankratov

doi:10.4028/www.scientific.net/MSF.457-460.449

Paper Titles

Interface Electronic Structures of Transition Metal(Cr, Fe) on 6H(4H)-SiC(0001)Si Face by Soft X-Ray Fluorescence Spectroscopy
p.427

Modification of 6H-SiC Surface Defect Structure during Hydrogen Etching
p.431

Defects in High-Purity Semi-Insulating SiC
p.437

Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
p.443

A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials
p.449

Density Functional Based Modelling of 30° Partial Dislocations in SiC
p.453

Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC
p.457

Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC
p.461

EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC
p.465

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A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

449-452

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.449

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Online since:

June 2004

Authors:

Alexander Mattausch, M. Bockstedte, Oleg Pankratov

Keywords:

Annealing, Carbon Clusters, Localised Vibrational Modes, Point Defect

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