Wettability Study of SiC in Correlation with XPS Analysis
p.423
p.423
Interface Electronic Structures of Transition Metal(Cr, Fe) on 6H(4H)-SiC(0001)Si Face by Soft X-Ray Fluorescence Spectroscopy
p.427
p.427
Modification of 6H-SiC Surface Defect Structure during Hydrogen Etching
p.431
p.431
Defects in High-Purity Semi-Insulating SiC
p.437
p.437
Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
p.443
p.443
A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials
p.449
p.449
Density Functional Based Modelling of 30° Partial Dislocations in SiC
p.453
p.453
Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC
p.457
p.457
Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC
p.461
p.461
Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
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Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
443-448
Citation:
Online since:
June 2004
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© 2004 Trans Tech Publications Ltd. All Rights Reserved
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