Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

443-448

DOI:

10.4028/www.scientific.net/MSF.457-460.443

Citation:

A. Gali et al., "Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 443-448, 2004

Online since:

June 2004

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