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Paper Titles
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Interface Electronic Structures of Transition Metal(Cr, Fe) on 6H(4H)-SiC(0001)Si Face by Soft X-Ray Fluorescence Spectroscopy
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Modification of 6H-SiC Surface Defect Structure during Hydrogen Etching
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Defects in High-Purity Semi-Insulating SiC
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A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials
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Defects in High-Purity Semi-Insulating SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

437-442

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.437

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Online since:

June 2004

Authors:

Nguyen Tien Son, Björn Magnusson, Z. Zolnai, Alexsandre Ellison, Erik Janzén

Keywords:

Antisite, Carrier Compensation, Defect, EPR, Photoluminescence (PL), Semi-insulating (SI), Vacancy

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