[1]
R.F. Davis, G. Kelner, M. Shur and J. Palmour, J.A. Edmond, Proc. IEEE, 79, 677 (1991).
Google Scholar
[2]
O. Kubo, T. Harada, T. Kobayashi, J.-T. Ryu, M. Katayama and K. Oura, Jap. J. Appl. Phys., 39, 4343 (2000).
Google Scholar
[3]
T. Fujino, T. Fuse, J.-T. Ryu, K. Inudzuka, Y. Yamazaki, M. Katayama and K. Oura, Jap. J. Appl. Phys., 39, 4340 (2000).
DOI: 10.1143/jjap.39.4340
Google Scholar
[4]
U. Starke, J. Schardt and M. Franke, Appl. Phys. A, 65, 587 (1997).
Google Scholar
[5]
U. Starke, J. Schardt J. Bernhardt and K. Heinz, J. of Vac. Sci. and Technol. A, 17, 1688 (1999).
Google Scholar
[6]
U. Starke, Atomic Structure of SiC Surfaces, in: W.J. Choyke, H. Matsunami, G. Pensl (Eds.): Silicon Carbide (Springer, Berlin, 2004) p.281.
Google Scholar