Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum

Asaoka Yasushi; Nobuyuki Sano; Tadaaki Kaneko

doi:10.4028/www.scientific.net/MSF.457-460.403

Paper Titles

Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H
p.387

Reconstruction of Cleaved 6H-SiC Surfaces
p.391

The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC
p.395

H-Induced Si-Rich 3C-Si(100) 3x2 Surface Metallization
p.399

Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum
p.403

SiC Surface Nanostructures Induced by Self-Ordering of Nano-Facets
p.407

Dynamic of Laser Ablation in SiC
p.411

Tailoring the SiC Subsurface Stacking by the Chemical Potential
p.415

Growth of Ultrathin Ag Films on 4H-SiC(0001)
p.419

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Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

403-406

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.403

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Online since:

June 2004

Authors:

Asaoka Yasushi, Nobuyuki Sano, Tadaaki Kaneko

Keywords:

Atomic Force Microscope (AFM), Carbon Nanotube (CN), High-Vacuum, Step Bunching, Surface Morphology, Surface Preparation

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References

[1] F. Owman, C. Hallin, P. Martensson and E. Janzen: J. Cryst. Growth Vol. 167 (1996), p.391.

Google Scholar

[2] S. Nakamura, T. Kimoto and H. Matsunami: Appl. Phys. Lett. Vol. 76(2000), p.3412.

Google Scholar

[3] Z.Y. Xie and al: J. Cryst. Growth Vol. 217 (2000), p.115.

Google Scholar

[4] G. Younes and al: Appl. Suf. Sci. Vol. 207(2003), p.200.

Google Scholar

[5] N. Ohtani and al: J. Cryst. Growth Vol. 210 (2000), p.613.

Google Scholar

[6] M. Kusunoki and: Appl. Phys. Lett. Vol. 77 (2000), p.531.

Google Scholar

[7] F. Dulot and al: Appl. Surf. Sci. Vol. 187 (2002).

Google Scholar