Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

403-406

DOI:

10.4028/www.scientific.net/MSF.457-460.403

Citation:

A. Yasushi et al., "Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum", Materials Science Forum, Vols. 457-460, pp. 403-406, 2004

Online since:

June 2004

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$35.00

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