Reconstruction of Cleaved 6H-SiC Surfaces

Ulrich Starke; M. Tallarida; A. Kumar; K.M. Horn; O. Seifarth; L. Kipp

doi:10.4028/www.scientific.net/MSF.457-460.391

Paper Titles

Inelastic Stress Relaxation in Single Crystal SiC Substrates
p.375

Dependence of Micropipe Dissociation on Surface Orientation
p.379

Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach
p.383

Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H
p.387

Reconstruction of Cleaved 6H-SiC Surfaces
p.391

The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC
p.395

H-Induced Si-Rich 3C-Si(100) 3x2 Surface Metallization
p.399

Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum
p.403

SiC Surface Nanostructures Induced by Self-Ordering of Nano-Facets
p.407

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Reconstruction of Cleaved 6H-SiC Surfaces

Reconstruction of Cleaved 6H-SiC Surfaces

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

391-394

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.391

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Online since:

June 2004

Authors:

Ulrich Starke, M. Tallarida, A. Kumar, K.M. Horn, O. Seifarth, L. Kipp

Keywords:

6H-SiC, C-Face, Cleavage, Hexagonal Surfaces, Low-Energy Electron Diffraction, Photoelectron Spectroscopy, Reconstruction, SiC(0001), SiC(000-1), Si-Face, Surface Structure

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