Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

387-390

DOI:

10.4028/www.scientific.net/MSF.457-460.387

Citation:

D. Chaussende et al., "Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H ", Materials Science Forum, Vols. 457-460, pp. 387-390, 2004

Online since:

June 2004

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$35.00

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