Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H

Didier Chaussende; Patrick Chaudouët; Laurent Auvray; Michel Pons; Roland Madar

doi:10.4028/www.scientific.net/MSF.457-460.387

Paper Titles

Deformation of 4H-SiC Single Crystals Oriented for Prism Slip
p.371

Inelastic Stress Relaxation in Single Crystal SiC Substrates
p.375

Dependence of Micropipe Dissociation on Surface Orientation
p.379

Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach
p.383

Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H
p.387

Reconstruction of Cleaved 6H-SiC Surfaces
p.391

The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC
p.395

H-Induced Si-Rich 3C-Si(100) 3x2 Surface Metallization
p.399

Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum
p.403

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Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

387-390

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.387

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Online since:

June 2004

Authors:

Didier Chaussende, Patrick Chaudouët, Laurent Auvray, Michel Pons, Roland Madar

Keywords:

3C-SiC, Electron Backscatter Diffraction (EBSD), Nucleation

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References

[1] H. Nagasawa, T. Kawahara, and K. Yagi: Materials Science Forum Vol. 389-393 (2002), p.319.

Google Scholar

[2] H.N. Jayatirtha and M.G. Spencer: Journal of Crystal Growth Vol. 174 (1997), p.662.

Google Scholar

[3] H.S. Kong, J.T. Glass, and R.F. Davis: Journal of Materials Research Vol. 4 (1989), p.204.

Google Scholar

[4] I. Matko, B. Chenevier, M. Audier, R. Madar, M. Diani, L. Simon, L. Kubler, and D. Aubel: Materials Science Forum Vol. 389-393 (2002), p.315.

DOI: 10.4028/www.scientific.net/msf.389-393.315

Google Scholar

[5] D. Chaussende, F. Baillet, L. Charpentier, E. Pernot, M. Pons, and R. Madar: Material Science Forum Vol. 433-436 (2003), p.25.

DOI: 10.4028/www.scientific.net/msf.433-436.25

Google Scholar

[6] A.J. Schwartz, M. Kumar, and B.L. Adams, Electron Backscatter Diffraction in Materials Science (Kluwer Academic/Plenum Publishers, 2000).

Google Scholar