Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach

A.K. Semennikov; S.Yu. Karpov; M.S. Ramm; A.E. Romanov; Yuri Makarov

doi:10.4028/www.scientific.net/MSF.457-460.383

Paper Titles

Structural Transformation of Dislocated Micropipes in Silicon Carbide
p.367

Deformation of 4H-SiC Single Crystals Oriented for Prism Slip
p.371

Inelastic Stress Relaxation in Single Crystal SiC Substrates
p.375

Dependence of Micropipe Dissociation on Surface Orientation
p.379

Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach
p.383

Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H
p.387

Reconstruction of Cleaved 6H-SiC Surfaces
p.391

The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC
p.395

H-Induced Si-Rich 3C-Si(100) 3x2 Surface Metallization
p.399

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Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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383-386

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.383

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Online since:

June 2004

Authors:

A.K. Semennikov, S.Yu. Karpov, M.S. Ramm, A.E. Romanov, Yuri Makarov

Keywords:

2H-AlN, 4H-SiC, Dislocation, Low-Dislocation Crystal, Preferable Orientation, Slip System

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