Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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457-460

Citation:

F. Gao et al., "Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 457-460, 2004

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June 2004

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