Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC

Fei Gao; William J. Weber; M. Posselt; V. Belko

doi:10.4028/www.scientific.net/MSF.457-460.457

Paper Titles

Defects in High-Purity Semi-Insulating SiC
p.437

Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
p.443

A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials
p.449

Density Functional Based Modelling of 30° Partial Dislocations in SiC
p.453

Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC
p.457

Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC
p.461

EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC
p.465

Investigations of Possible Nitrogen Participation in the Z₁/Z₂ Defect in 4H-SiC
p.469

Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
p.473

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Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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457-460

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.457

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June 2004

Authors:

Fei Gao, William J. Weber, M. Posselt, V. Belko

Keywords:

Activation Energy, Defect Diffusion, Molecular Dynamic (MD), Nudged-Elastic Band Method

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