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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

Authors: Alexander A. Lebedev, Anatoly M. Strel'chuk, Alexey N. Kuznetsov, N.S. Savkina

597

Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research

Authors: Xian Yun Ma, Michael Dudley, Tangali S. Sudarshan

601

Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap Frequencies

Authors: Vytautas Grivickas, Paulius Grivickas, Jan Linnros, Augustinas Galeckas

605

Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC

Authors: Michel Mermoux, Alexandre Crisci, Francis Baillet

609

Raman Scattering by Coupled Phonon-Plasmon Modes

Authors: L.A. Falkovsky

613

Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy

Authors: Roland Püsche, Martin Hundhausen, Lothar Ley, Kurt Semmelroth, Frank Schmid, Gerhard Pensl, Hiroyuki Nagasawa

617

Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering

Authors: Eiji Kurimoto, M. Hangyo, Hiroshi Harima, Kenji Kisoda, Taro Nishiguchi, Shigehiro Nishino, Shinichi Nakashima, Masakazu Katsuno, Noboru Ohtani

621

Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method

Authors: Soo Hyung Seo, Ju Hwan Park, Joon Suk Song, Myung Hwan Oh

625

Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition

Authors: Mitsuo Okamoto, Ryouji Kosugi, Shinichi Nakashima, Kenji Fukuda, Kazuo Arai

629

Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy

Authors: Toru Ujihara, S. Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, N. Usami, K. Fujiwara, G. Sazaki, Kazuo Nakajima

633