Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC

Authors: L. Kasamakova-Kolaklieva, L. Storasta, Ivan G. Ivanov, Björn Magnusson, Sylvie Contreras, C. Consejo, Julien Pernot, Marcin Zielinski, Erik Janzén

677

Electrochemical C-V Profiling of n-Type 4H-SiC

Authors: Konstantinos Zekentes, M. Kayambaki, S. Mousset

681

Impurity Conduction Observed in Al-Doped 6H-SiC

Authors: M. Krieger, Kurt Semmelroth, Gerhard Pensl

685

Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy Mobility

Authors: N.S. Saks, M.G. Ancona, Lori A. Lipkin

689

High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures

Authors: Enn Velmre, Andres Udal, Vytautas Grivickas

693

As-Grown and Process-Related Defects in Schottky Barrier Diodes Fabricated on Bulk Off-Axis n-Type 6H-SiC

Authors: E. van Wyk, A.W.R. Leitch

697

Impact Ionization in α-SiC and Avalanche Photoamplifiers

Authors: Vladimir Ilich Sankin

701

Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

Authors: Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel'chuk, D.V. Davydov, Anders Hallén, Andrey O. Konstantinov, A. Nikiforov

705

The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory

Authors: Uwe Gerstmann, Adam Gali, Peter Deák, Thomas Frauenheim, Harald Overhof

711

The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study

Authors: M. Bockstedte, Alexander Mattausch, Oleg Pankratov

715