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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source

Authors: Z.G. Herro, Matthias Bickermann, Boris M. Epelbaum, Roland Weingärtner, Ulrike Künecke, Albrecht Winnacker

719

In-Situ Er-Doping of SiC Bulk Single Crystals

Authors: Ralf Müller, Patrick Desperrier, Christoph Seitz, Matthias Weisser, Andreas Magerl, Manfred Maier, Albrecht Winnacker, Peter J. Wellmann

723

Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source

Authors: Patrick Desperrier, Ralf Müller, Albrecht Winnacker, Peter J. Wellmann

727

Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth

Authors: Jérôme Mezière, Pierre Ferret, Elisabeth Blanquet, Michel Pons, Lea Di Cioccio, Thierry Billon

731

Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt

Authors: Christophe Jacquier, Gabriel Ferro, Carole Balloud, Marcin Zielinski, Jean Camassel, Efstathios K. Polychroniadis, J. Stoemenos, François Cauwet, Yves Monteil

735

Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition

Authors: Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

739

Formation of SiC Delta-Doped-Layer Structures by CVD

Authors: Kunimasa Takahashi, Masao Uchida, Osamu Kusumoto, Kenya Yamashita, Ryouko Miyanaga, Makoto Kitabatake

743

As-Grown 4H-SiC Epilayers with Magnetic Properties

Authors: Mikael Syväjärvi, V. Stanciu, M. Izadifard, W.M. Chen, I.A. Buyanova, P. Svedlindh, Rositza Yakimova

747

Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC

Authors: Hideharu Matsuura, K. Aso, S. Kagamihara, Hisaomi Iwata, T. Ishida, K. Nishikawa

751

Non-Contact Doping Profiling in Epitaxial SiC

Authors: A. Savtchouk, E. Oborina, A.M. Hoff, J. Lagowski

755