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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Table of Contents

Paper Title Page

Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates

Authors: M. Zhang, H. McD. Hobgood, Michael Treu, P. Pirouz

759

Spin-On Doping of Porous SiC with Er

Authors: Yaroslav Koshka, Y. Song, J. Walker, Stephen E. Saddow, Marina G. Mynbaeva

763

Sc Impurity in Silicon Carbide

Authors: E.I. Yuryeva, V.I. Zubkov, V.S. Ballandovich, I.I. Parfenova

767

Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS

Authors: Larry Wang

771

Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements

Authors: Sandrine Juillaguet, Marcin Zielinski, Carole Balloud, C. Sartel, C. Consejo, Bernard Boyer, Véronique Soulière, Jean Camassel, Yves Monteil

775

Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process

Authors: S. Uekusa, H. Maruyama

779

Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide

Authors: G. Pasold, F. Albrecht, C. Hülsen, R. Sielemann, W.-D. Zeitz, W. Witthuhn

783

Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance

Authors: Matthias Bickermann, K. Irmscher, Boris M. Epelbaum, Albrecht Winnacker

787

Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS

Authors: Ulrike Grossner, Joachim Grillenberger, F. Albrecht, G. Pasold, R. Sielemann, Bengt Gunnar Svensson, W. Witthuhn

791

Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers

Authors: Kwang Seok Lee, Sung Hyuk Lee, Man Kim, Kee Suk Nahm

797