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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Table of Contents

Paper Title Page

Electro-Chemical Mechanical Polishing of Silicon Carbide

Authors: Can Hua Li, Rong Jun Wang, Joseph Seiler, I. Bhat

801

Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates

Authors: V.D. Heydemann, W.J. Everson, Rick D. Gamble, David Snyder, Marek Skowronski

805

Surface Modification of 3C-SiC for Good Ni Ohmic Contact

Authors: Jae Il Noh, Seung Hyun Lee, Kee Suk Nahm

809

Mechanisms in Electrochemical Etching of α-SiC Substrates

Authors: Hideno Mikami, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

813

Modification of the Silicon Carbide by Proton Irradiation

Authors: Elena V. Bogdanova, Vitalii V. Kozlovski, D.S. Rumyantsev, A.N. Volkova, Alexander A. Lebedev

817

Etching of SiC with Fluorine ECR Plasma

Authors: Christian Förster, Volker Cimalla, Ratislav Kosiba, Gernot Ecke, Petia Weih, Oliver Ambacher, Joerg Pezoldt

821

Characterization of 3C-SiC Monocrystals Using Positron Annihilation Spectroscopy

Authors: X. Kerbiriou, A. Greddé, Marie France Barthe, P. Desgardin, G. Blondiaux

825

Improvement of SiC Wafer Warp by Annealing

Authors: Makato Sasaki, Shinsuke Harada, Yoshihiro Okamoto, Hideo Kinoshita, Youichi Miyanagi, Hiromu Shiomi

829

Comparison of Different Surface Pre-Treatments to n-Type 4H-SiC and their Effect on the Specific Contact Resistance of Ni Ohmic Contacts

Authors: G. Pope, Owen James Guy, Philip Andrew Mawby

833

Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiC

Authors: Andrea Parisini, Antonella Poggi, Roberta Nipoti

837