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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers

Authors: J. Neil Merrett, James D. Scofield, Bang Hung Tsao, Michael S. Mazzola, D. Seale, W.A. Draper, Igor Sankin, Jeff B. Casady, V. Bondarenko

921

Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation

Authors: Konstantin Vassilevski, J. Hedley, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright

925

Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC

Authors: Kenneth A. Jones, T.S. Zheleva, Matthew H. Ervin, Pankaj B. Shah, Michael A. Derenge, G.J. Gerardi, Jaime A. Freitas, R.D. Vispute

929

Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap

Authors: Yuki Negoro, K. Katsumoto, Tsunenobu Kimoto, Hiroyuki Matsunami

933

Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature

Authors: Alain Declémy, A.A. Shiryaev, S. Stepanov, Jean François Barbot, Marie France Beaufort, Erwan Oliviero, E. Ntsoenzok, Thierry Sauvage

937

Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction

Authors: Jean Camassel, Hervé Peyre, D.J. Brink, Marcin Zielinski, Servane Blanqué, Narcis Mestres, Philippe Godignon

941

SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature

Authors: Antonella Poggi, Roberta Nipoti, Francesco Moscatelli, G.C. Cardinali, Mariaconcetta Canino

945

SiC-Based Current Limiter Devices

Authors: Jean-Pierre Chante, Dominique Tournier, Dominique Planson, Christophe Raynaud, Mihai Lazar, Marie Laure Locatelli, Pierre Brosselard

951

High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications

Authors: Jian Hui Zhao, Larry X. Li, Kiyoshi Tone, Peter Alexandrov, Leonid Fursin, J. Carter, M. Weiner

957

SiC Devices for High Voltage High Power Applications

Authors: Yoshitaka Sugawara

963