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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Table of Contents

Paper Title Page

Influence of H₂ Pre-Treatment on Ni/4H-SiC Schottky Diode Properties

Authors: Y. Yamamoto, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

1049

The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes

Authors: A. Hefner, Ty McNutt, D. Berning, R. Singh, A. Akuffo

1053

High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

Authors: Anatoly M. Strel'chuk, Alexander A. Lebedev, Alexey N. Kuznetsov, N.S. Savkina, V.A. Soloviev

1057

High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

Authors: David J. Spry, Andrew J. Trunek, Philip G. Neudeck

1061

Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face

Authors: Yasunori Tanaka, Kazutoshi Kojima, Takaya Suzuki, T. Hayashi, Kenji Fukuda, Tsutomu Yatsuo, Kazuo Arai

1065

Avalanche Multiplication and Breakdown in 4H-SiC Diodes

Authors: B.K. Ng, John P.R. David, D.J. Massey, R.C. Tozer, G.J. Rees, Feng Yan, Jian Hui Zhao, M. Weiner

1069

Investigation of Rapid Thermal Annealed pn-Junctions in SiC

Authors: Martin Rambach, Roland Weiss, Lothar Frey, Anton J. Bauer, Heiner Ryssel

1073

Ballistic Electron Emission Microscopy Study of p-Type 4H-SiC

Authors: Y. Ding, K.B. Park, J.P. Pelz, A.V. Los, Michael S. Mazzola

1077

Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes

Authors: Luciano Scaltrito, Edvige Celasco, Samuele Porro, Sergio Ferrero, Fabrizio Giorgis, C. Fabrizio Pirri, Denis Perrone, Umberto M. Meotto, P. Mandracci, G. Richieri, Luigi Merlin, Anna Cavallini, Antonio Castaldini, Marco Rossi

1081

Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties

Authors: Syunsuke Izumi, Isaho Kamata, Takeshi Tawara, Hiroyuki Fujisawa, Hidekazu Tsuchida

1085