The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes

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Materials Science Forum (Volumes 457-460)

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Roland Madar, Jean Camassel and Elisabeth Blanquet

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1053-1056

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A. Hefner et al., "The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes", Materials Science Forum, Vols. 457-460, pp. 1053-1056, 2004

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June 2004

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[1] 0.

[1] 4.

[1] 8.

[2] 2.

[2] 6.

1 2 3 T o t a l d e g r a d a t io n ( A m p X M in ) Tb*Ik (A*ns).

[4] [6] [8] [1] 0.

[1] 2 Forward Voltage (V) 0. 5.

[1] 1. 5.

[2] 2. 5.

[3] 0 0. 2 0. 4 0. 6 0. 8 Total Degradation (Am p X M in) Irrm/If.

[4] [5] [6] [7] [8] [9] [10] [11] Forward Voltage (V) 1. 5A 1A 0. 5A 0. 25 0. 3 0. 35 0. 4 0. 45 0. 5 0. 55 0. 6 0. 65 0. 7 0 50 100 150 200 250 Total Degradation (Amp X Hour) Irrm/If.

[8] [9] [10] [11] [12] [13] [14] Forward Voltage (V) 1. 5A 1A 0. 5A 4. 5.

[5] 5. 5.

[6] 6. 5 0 50 100 150 200 250 Total Degradation (Amp X Hours) Tb*Ik (A*ns).

[11] 11. 5.

[12] 12. 5.

[13] Forward Voltage (V) Fig. 5. Degradation measurements for a 10kV, 0. 04 cm.

[2] device from the same lot as the device in Fig. 3 stressed at 100 A/cm.

[2] indicating Vf @ 1A on each graph and a) τBIK extracted at IF = 1 A, and b) IRRM /IF for three values of IF. Fig. 6. Degradation measurements for a 10kV, 0. 01 cm.

[2] device stressed at 300 A/cm.

[2] indicating Vf @ 1A on each graph and a) τBIK extracted at IF = 1 A, and b) IRRM /IF for three values of IF.