High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1061-1064

DOI:

10.4028/www.scientific.net/MSF.457-460.1061

Citation:

D. J. Spry et al., "High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas", Materials Science Forum, Vols. 457-460, pp. 1061-1064, 2004

Online since:

June 2004

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