High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

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Materials Science Forum (Volumes 457-460)

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Roland Madar, Jean Camassel and Elisabeth Blanquet

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1061-1064

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D. J. Spry et al., "High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas", Materials Science Forum, Vols. 457-460, pp. 1061-1064, 2004

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June 2004

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DOI: https://doi.org/10.1007/978-3-642-18870-1_8

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DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.261

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[12] 4H <0001>.

[13] 4H <1120> & <0338>.

[14] 0 1 2 3 4 5 1 1017 3 1017 5 1017 Breakdown Electric Field [MV/cm] Doping [1/cm3] Silicon.

[12] 4H <0001>.

[13] 4H <1120> & <0338>.

[14] 3C on Silicon.

[15] 3C p-type Schottky (this work) 3C pn diode.

[3] 4H p-type Schottky (this work) 3C on Silicon.

[15] 3C p-type Schottky (this work) 3C pn diode.

[3] 4H p-type Schottky (this work) Fig. 6 Breakdown electric field vs. doping at 23°C.

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