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Paper Titles
Numerical Study of Current Crowding Phenomenon in Complementary 4H-SiC JBS Rectifiers
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Influence of H2 Pre-Treatment on Ni/4H-SiC Schottky Diode Properties
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The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes
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High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
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High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas
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Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face
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Avalanche Multiplication and Breakdown in 4H-SiC Diodes
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Investigation of Rapid Thermal Annealed pn-Junctions in SiC
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Ballistic Electron Emission Microscopy Study of p-Type 4H-SiC
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High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1061-1064

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1061

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Cite this paper

Online since:

June 2004

Authors:

David J. Spry, Andrew J. Trunek, Philip G. Neudeck

Keywords:

3C-SiC, 4H-SiC, Breakdown Electric Field, Schottky Diode, Step-Free Surface

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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