Influence of H2 Pre-Treatment on Ni/4H-SiC Schottky Diode Properties

Y. Yamamoto; Tomoaki Hatayama; Hiroshi Yano; Yukiharu Uraoka; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.457-460.1049

Paper Titles

Design, Fabrication and Characterization of 5 kV 4H-SiC p⁺n Planar Bipolar Diodes Protected by Junction Termination Extension
p.1033

Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon Carbide
p.1037

4H-SiC p-n Diode using Internal Ring (IR) Termination Technique
p.1041

Numerical Study of Current Crowding Phenomenon in Complementary 4H-SiC JBS Rectifiers
p.1045

Influence of H₂ Pre-Treatment on Ni/4H-SiC Schottky Diode Properties
p.1049

The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes
p.1053

High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
p.1057

High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas
p.1061

Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face
p.1065

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Influence of H₂ Pre-Treatment on Ni/4H-SiC Schottky Diode Properties

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1049-1052

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1049

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Online since:

June 2004

Authors:

Y. Yamamoto, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Barrier Height, H₂ Annealing, Schottky Diode, Threshold Voltage

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