Influence of H2 Pre-Treatment on Ni/4H-SiC Schottky Diode Properties

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1049-1052

Citation:

Y. Yamamoto et al., "Influence of H2 Pre-Treatment on Ni/4H-SiC Schottky Diode Properties", Materials Science Forum, Vols. 457-460, pp. 1049-1052, 2004

Online since:

June 2004

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