Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1033-1036

DOI:

10.4028/www.scientific.net/MSF.457-460.1033

Citation:

C. Raynaud et al., "Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension", Materials Science Forum, Vols. 457-460, pp. 1033-1036, 2004

Online since:

June 2004

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$35.00

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