Paper Title:
Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1033-1036
DOI
10.4028/www.scientific.net/MSF.457-460.1033
Citation
C. Raynaud, M. Lazar, D. Planson, J.-P. Chante, Z. Sassi, "Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension", Materials Science Forum, Vols. 457-460, pp. 1033-1036, 2004
Online since
June 2004
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$35.00
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