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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Design, Fabrication and Characterization of 5 kV...

Design, Fabrication and Characterization of 5 kV 4H-SiC p⁺n Planar Bipolar Diodes Protected by Junction Termination Extension

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1033-1036

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1033

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Online since:

June 2004

Authors:

Christophe Raynaud, Mihai Lazar, Dominique Planson, Jean-Pierre Chante, Z. Sassi

Keywords:

4H-SiC, Bipolar Diode, Breakdown Voltage

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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