The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1025-1028

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M. Lazar et al., "The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study ", Materials Science Forum, Vols. 457-460, pp. 1025-1028, 2004

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June 2004

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[1] E. Morvan, J. Monserrat, J. Rebollo, D. Flores, X. Jorda, M.L. Locatelli and L. Ottaviani, Mater. Sci. Forum Vol. 264-268 (1998), p.737.

DOI: https://doi.org/10.4028/www.scientific.net/msf.264-268.737

[2] M. Lazar, C. Raynaud, D. Planson, M.L. Locatelli, K. Isoird, L. Ottaviani, J.P. Chante, R. Nipoti, A. Poggi, and G. Cardinali, Mater. Sci. Forum Vol. 389-393 (2002), p.827.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.827

[3] M. Lazar, C. Raynaud, D. Planson, J. -P. Chante, M. -L. Locatelli, L. Ottaviani and Ph. Godignon, J. Appl. Phys, Vol. 94 (2003) p.2992.

[4] R. Nipoti, F. Moscatelli, A. Scorzoni, A. Poggi, G. Cardinali, M. Lazar, C. Raynaud, D. Planson, M. -L. Locatelli and J. -P. Chante, MRS Proceedings Vol. 742 (2002), K6. 2.

DOI: https://doi.org/10.1557/proc-742-k6.2

[5] A. O. Konstantinov, Q. Wahab, N. Nordell, U. Lindefelt, J. Electr. Mater. Vol. 27 (1998) p.335 Journal Title and Volume Number (to be inserted by the publisher) 5.

[6] S.R. Wang, C. Raynaud, D. Planson, M. Lazar and J. -P. Chante, Mater. Sci. Forum Vol. 433- 436 (2003), p.863.

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