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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460The Role of the Ion Implanted Emitter State on...

The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1025-1028

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1025

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Online since:

June 2004

Authors:

Mihai Lazar, G.C. Cardinali, Christophe Raynaud, Antonella Poggi, Dominique Planson, Roberta Nipoti, Jean-Pierre Chante

Keywords:

Annealing, Bipolar Diode, Ion Implantation, Junction Termination Extension (JTE)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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