The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1025-1028

DOI:

10.4028/www.scientific.net/MSF.457-460.1025

Citation:

M. Lazar et al., "The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study ", Materials Science Forum, Vols. 457-460, pp. 1025-1028, 2004

Online since:

June 2004

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$35.00

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