P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching
p.1005
p.1005
Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate
p.1009
p.1009
Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring
p.1013
p.1013
Current Transport Mechanisms in 4H-SiC PiN Diodes
p.1017
p.1017
On-Chip Temperature Monitoring of a SiC Current Limiter
p.1021
p.1021
The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study
p.1025
p.1025
Low Voltage Silicon Carbide Zener Diode
p.1029
p.1029
Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension
p.1033
p.1033
Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon Carbide
p.1037
p.1037
On-Chip Temperature Monitoring of a SiC Current Limiter
Abstract:
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Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
1021-1024
Citation:
Online since:
June 2004
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Сopyright:
© 2004 Trans Tech Publications Ltd. All Rights Reserved
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