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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Comparison between Implanted and Epitaxial...

Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon Carbide

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1037-1040

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1037

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Online since:

June 2004

Authors:

Uwe Zimmermann, Martin Domeij, Anders Hallén, Mikael Östling

Keywords:

Dynamic IV, Forward Characteristics, Mesa Diodes, Reverse Recovery, Turn-On

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Lendenmann, A. Mukhitdinov, F. Dahlquist, H. Bleichner, M. Irwin, and R. Soderholm: in Proc. 13th Int. Symp. on Power Semiconductor Devices & ICs. IPSD '01, pp.31-34.

DOI: 10.1109/ispsd.2001.934553

[2] B. J. Baliga: Power Semiconductor Devices (PWS Publishing, Boston, 1995).

[3] D. ˚Aberg, A. Hall´en, J. ¨Osterman, U. Zimmermann, and B. Svensson: Mater. Sci. Forum vol. 389-393 (2002), pp.1309-1312.

[4] M. Domeij, U. Zimmermann, D. ˚Aberg, J. ¨Osterman, A. Hall´en, and M. ¨Ostling: Mater. Sci. Forum vol. 433-436 (2003), pp.847-850.

[5] U. Zimmermann, A. Hall´en, and B. Breitholtz: Mater. Sci. Forum vol. 338-342 (2000), pp.1323-4.