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HomeMaterials Science ForumMaterials Science Forum Vols. 457-4604H-SiC p-n Diode using Internal Ring (IR)...

4H-SiC p-n Diode using Internal Ring (IR) Termination Technique

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1041-1044

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1041

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Online since:

June 2004

Authors:

Geun Ho Song, Hyoung Wook Kim, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim

Keywords:

4H-SiC, Breakdown Voltage, Edge Termination, Internal Ring, PN Diode

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[6] H. W. Kim, W. Bahng, G. H. Song, S. C. Kim, N. K. Kim and E. D. Kim, will be presented in ICSCRM2003. 10 20 30 40 1700 1750 1800 1850 1900 Rectangular shape cell Circular shape cell Breakdown Voltage [V] Radius at the corner of rectangular shape cell [µm] Fig. 7. Breakdown voltage of rectangular and cicular shape cell.