4H-SiC p-n Diode using Internal Ring (IR) Termination Technique

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1041-1044

Citation:

G. H. Song et al., "4H-SiC p-n Diode using Internal Ring (IR) Termination Technique", Materials Science Forum, Vols. 457-460, pp. 1041-1044, 2004

Online since:

June 2004

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[6] H. W. Kim, W. Bahng, G. H. Song, S. C. Kim, N. K. Kim and E. D. Kim, will be presented in ICSCRM2003. 10 20 30 40 1700 1750 1800 1850 1900 Rectangular shape cell Circular shape cell Breakdown Voltage [V] Radius at the corner of rectangular shape cell [µm] Fig. 7. Breakdown voltage of rectangular and cicular shape cell.

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