[1]
N. Savkina et al.: Mater. Sci. and Eng. B Vol. 91-92 (2002), p.317.
Google Scholar
[2]
A. M. Strel'chuk et al.: Mater. Sci. and Eng. B Vol. 91-92 (2002), p.321.
Google Scholar
[3]
A.A. Lebedev et al.: Applied Surface Science Vol. 184 (2001), p.419.
Google Scholar
[4]
A.M. Strel'chuk et al.: Mater. Sci. and Eng. B Vol. 61-62 (1999), p.437.
Google Scholar
[5]
P.G. Neudeck et al.: IEEE Trans. Electron Devices Vol. 41 (1994), p.826.
Google Scholar
[6]
S. T Sah et al.: Proc. IRE Vol. 45 (1957), p.1228.
Google Scholar
[7]
A.M. Strel'chuk et al.: Characteristics of 6H-SiC bipolar JTE diodes realized by sublimation epitaxy and Al implantation, submitted to this conference.
Google Scholar
[8]
M. Anikin et al.: Semiconductors Vol. 28 (1994), p.171.
Google Scholar
[9]
A.N. Andreev et al.: Inst. Phys. Conf. Ser. N 137 (1994), p.271 (chapter 3).
Google Scholar
[10]
Yu. M . Altaiskii et al.: Sov. Phys. Semicond. Vol. 13 (1979), p.1152.
Google Scholar
[11]
J.A. Freitas Jr. et al.: Mat. Sci. and Eng. BVol. 11 (1992).
Google Scholar