Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face


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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




Y. Tanaka et al., "Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face", Materials Science Forum, Vols. 457-460, pp. 1065-1068, 2004

Online since:

June 2004




[1] H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano and Y. Sugawara: IEEE Electron Device Lett. Vol. 20(1999) p.611.

[2] K. Fukuda, J. Senzaki, K. Kojima and T. Suzuki: Mater. Sci. Forum Vol. 433-436 (2003) p.567.

[3] S. Nakamura, H. Kumagai, T. Kimoto and H. Matsunami: Appl. Phys. Lett. Vol. 80 (2002) p.3355.

[4] K. Kojima, T. Suzuki, S. Kuroda, J. Nishio and K. Arai: Jpn. J. Appl. Phys. Vol. 42 (2003) p. L637.

[5] B.J. Baliga: POWER SEMICONDUCTOR DEVICES (PWS Publishing Company, Boston, MA 1996).

[6] Y. Tanaka, S. Nishizawa, K. Fukuda, K. Arai, T. Ohno, N. Oyanagi, T. Suzuki and T. Yatsuo: Appl. Phys. Lett. Vol. 83 (2003) p.377.

[7] A.O. Konstantinov, Q. Wahab, N. Nordell and U. Lindefelt: Appl. Phys. Lett. Vol. 71 (1997).

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