Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face

Yasunori Tanaka; Kazutoshi Kojima; Takaya Suzuki; T. Hayashi; Kenji Fukuda; Tsutomu Yatsuo; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.457-460.1065

Paper Titles

Influence of H₂ Pre-Treatment on Ni/4H-SiC Schottky Diode Properties
p.1049

The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes
p.1053

High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
p.1057

High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas
p.1061

Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face
p.1065

Avalanche Multiplication and Breakdown in 4H-SiC Diodes
p.1069

Investigation of Rapid Thermal Annealed pn-Junctions in SiC
p.1073

Ballistic Electron Emission Microscopy Study of p-Type 4H-SiC
p.1077

Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes
p.1081

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Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1065-1068

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1065

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Online since:

June 2004

Authors:

Yasunori Tanaka, Kazutoshi Kojima, Takaya Suzuki, T. Hayashi, Kenji Fukuda, Tsutomu Yatsuo, Kazuo Arai

Keywords:

4H-SiC, Breakdown Voltage, Critical Electric Field, Ion Implantation, Mesa Structures, PN Diode

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References

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