Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1081-1084

DOI:

10.4028/www.scientific.net/MSF.457-460.1081

Citation:

L. Scaltrito et al., "Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes", Materials Science Forum, Vols. 457-460, pp. 1081-1084, 2004

Online since:

June 2004

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.