Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes
p.1081
p.1081
Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties
p.1085
p.1085
Simulation and Prototype Fabrication of Microwave Modulators with 4H-SiC p-i-n Diodes
p.1089
p.1089
Bulk SiC Devices for High Radiation Environments
p.1093
p.1093
2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes
p.1097
p.1097
Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes
p.1101
p.1101
High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
p.1105
p.1105
4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer
p.1109
p.1109
Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
p.1113
p.1113
2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes
Abstract:
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Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
1097-1100
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Online since:
June 2004
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© 2004 Trans Tech Publications Ltd. All Rights Reserved
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