Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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1101-1104

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I. Sankin et al., "Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes ", Materials Science Forum, Vols. 457-460, pp. 1101-1104, 2004

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June 2004

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[1] R. Singh, J.A. Cooper, Jr., M.R. Melloch, T.P. Chow, J. W Palmour: IEEE Trans. on Electron Devices Vol. 49, Issue: 4, April 2002, p.665.

DOI: https://doi.org/10.1109/16.992877

[2] I. Sankin, J.B. Dufrine, J.N. Merrett and J.B. Casady: Mater. Sci. Forum Vol. 433-436 (2003), p.879.

[3] P.G. Neudeck, C. Fazi: IEEE Trans. on Electron Devices Vol. 46, Issue: 3, March 1999, p.485.

[4] H.M. McGlothling, D.T. Morizette, J.A. Cooper, Jr. and M.R. Melloch: Digest of the 57th Device Research Conf. (1999), p.42.

[5] L.G. Fursin, J.H. Zhao, M. Weiner: Electronic Letters, Vol. 37, No. 17, August 2001 Table 1: Comparison of the results of the current and previous works Previous work This work Wafer # 1 2 3 4 5 Epi thickness/doping, [µm / cm-3] 10/2x10.

[16] 8. 6/1x10.

[16] 11/1x10.

[16] 10/5x10.

[15] 10/5x10.

[15] JTE implant ion Al+ Al+ Al+ Al+ B + JTE implant dose, [cm-2] 2. 2x10.

[13] 2. 2x10.

[13] 2x10.

[13] 2x10.

[13] 1x10.

[15] Blocking voltage, [kV] 1. 1 1. 4 1. 8 1. 7 1. 7 Maximum 1D field, [MV/cm] 2. 69 2. 58 2. 63 2. 1 2. 1 Maximum simulated electric field in the bulk, [MV/cm] 2. 9 2. 9 3 3 n/a.

[2] [3] [4] [5] [6] 0. E+00 1. E+13 2. E+13 3. E+13 4. E+13 JTE dose, cm^-3 Maximum field in the bulk, MV/cm Wafer 3 Wafer 4 Critical field in 4H-SiC Implanted dose Figure 5: Simulation results which show the dependence of the maximum electric field in the device bulk on the implantation dose of the JTE region.

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