Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1101-1104

DOI:

10.4028/www.scientific.net/MSF.457-460.1101

Citation:

I. Sankin et al., "Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes ", Materials Science Forum, Vols. 457-460, pp. 1101-1104, 2004

Online since:

June 2004

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$35.00

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