Simulation and Prototype Fabrication of Microwave Modulators with 4H-SiC p-i-n Diodes

A.V. Bludov; Mykola S. Boltovets; Konstantin Vassilevski; A.V. Zorenko; Konstantinos Zekentes; Alexander A. Lebedev; Valentyn A. Krivutsa

doi:10.4028/www.scientific.net/MSF.457-460.1089

Paper Titles

Investigation of Rapid Thermal Annealed pn-Junctions in SiC
p.1073

Ballistic Electron Emission Microscopy Study of p-Type 4H-SiC
p.1077

Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes
p.1081

Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties
p.1085

Simulation and Prototype Fabrication of Microwave Modulators with 4H-SiC p-i-n Diodes
p.1089

Bulk SiC Devices for High Radiation Environments
p.1093

2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes
p.1097

Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes
p.1101

High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
p.1105

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Simulation and Prototype Fabrication of Microwave Modulators with 4H-SiC p-i-n Diodes

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1089-1092

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1089

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Online since:

June 2004

Authors:

A.V. Bludov, Mykola S. Boltovets, Konstantin Vassilevski, A.V. Zorenko, Konstantinos Zekentes, Alexander A. Lebedev, Valentyn A. Krivutsa

Keywords:

4H-SiC, Epitaxial Structure, Microstrip, Microwave Modulator, PiN Diode

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References

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