Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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1085-1088

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S. Izumi et al., "Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties ", Materials Science Forum, Vols. 457-460, pp. 1085-1088, 2004

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June 2004

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