Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1085-1088

DOI:

10.4028/www.scientific.net/MSF.457-460.1085

Citation:

S. Izumi et al., "Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties ", Materials Science Forum, Vols. 457-460, pp. 1085-1088, 2004

Online since:

June 2004

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$35.00

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