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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Analysis of Structural Defects in the 4H-SiC...

Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1085-1088

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1085

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Online since:

June 2004

Authors:

Syunsuke Izumi, Isaho Kamata, Takeshi Tawara, Hiroyuki Fujisawa, Hidekazu Tsuchida

Keywords:

Dislocation, Leakage Current, Micropipe Dissociation, PN Diode, Stacking Fault

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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