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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460High Power 4H-SiC PiN Diodes with Minimal Forward...

High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1105-1108

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1105

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Online since:

June 2004

Authors:

Mrinal K. Das, Joseph J. Sumakeris, Michael J. Paisley, Adrian R. Powell

Keywords:

Forward Voltage Drift, Junction Termination Extension (JTE), PiN Diode

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] Y. Sugawara, et al., 2001 ISPSD, Osaka, Japan.

[2] H. Lendenmann, J.P. Bergman, F. Dahlquist, and C. Hallin, Mat. Sci. Forum 433-436 (2003) 901.

[3] J. Sumakeris, et al., 2003 ICSCRM, Lyon, France.

[4] H. Iwata, U. Lindefelt, S. Oberg, and P.R. Briddon, Phys. Rev. B, 65, (2002) 203. Fig. 6. PiN forward conduction for several temperatures.