High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1105-1108

Citation:

M. K. Das et al., "High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift", Materials Science Forum, Vols. 457-460, pp. 1105-1108, 2004

Online since:

June 2004

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[1] Y. Sugawara, et al., 2001 ISPSD, Osaka, Japan.

[2] H. Lendenmann, J.P. Bergman, F. Dahlquist, and C. Hallin, Mat. Sci. Forum 433-436 (2003) 901.

[3] J. Sumakeris, et al., 2003 ICSCRM, Lyon, France.

[4] H. Iwata, U. Lindefelt, S. Oberg, and P.R. Briddon, Phys. Rev. B, 65, (2002) 203. Fig. 6. PiN forward conduction for several temperatures.

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