Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1121-1124

DOI:

10.4028/www.scientific.net/MSF.457-460.1121

Citation:

I. Perez-Wurfl et al., "Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability ", Materials Science Forum, Vols. 457-460, pp. 1121-1124, 2004

Online since:

June 2004

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.