Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1121-1124

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I. Perez-Wurfl et al., "Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability ", Materials Science Forum, Vols. 457-460, pp. 1121-1124, 2004

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June 2004

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