Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability

Ivan Perez-Wurfl; John Torvik; B. Van Zeghbroeck

doi:10.4028/www.scientific.net/MSF.457-460.1121

Paper Titles

High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
p.1105

4,308V, 20.9 mΩ-cm² 4H-SiC MPS Diodes Based on a 30μm Drift Layer
p.1109

Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
p.1113

Extrinsic Base Design of SiC Bipolar Transistors
p.1117

Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm² Power Density Handling Ability
p.1121

Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction Transistors
p.1125

Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor
p.1129

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
p.1133

The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control Applications
p.1137

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Analysis of Power Dissipation and High Temperature...

Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm² Power Density Handling Ability

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Materials Science Forum (Volumes 457-460)

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1121-1124

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1121

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Online since:

June 2004

Authors:

Ivan Perez-Wurfl, John Torvik, B. Van Zeghbroeck

Keywords:

High Current, High Power, High Temperature Operation, SiC Bipolar Transistors, Thermal Model

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