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Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
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Extrinsic Base Design of SiC Bipolar Transistors
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Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm² Power Density Handling Ability
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Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction Transistors
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Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor
p.1129

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
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The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control Applications
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SiC BJT Technology for Power Switching and RF Applications
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Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Influence of Different Peripheral Protections on...

Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1129-1132

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1129

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Online since:

June 2004

Authors:

Pierre Brosselard, Volker Zorngiebel, Dominique Planson, Sigo Scharnholz, Jean-Pierre Chante, Emil Spahn, Christophe Raynaud, Mihai Lazar

Keywords:

4H-SiC, EGR, Junction Termination Extension (JTE), Mesa, Thyristor

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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