Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1129-1132

DOI:

10.4028/www.scientific.net/MSF.457-460.1129

Citation:

P. Brosselard et al., "Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor ", Materials Science Forum, Vols. 457-460, pp. 1129-1132, 2004

Online since:

June 2004

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$35.00

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