Paper Title:
Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1129-1132
DOI
10.4028/www.scientific.net/MSF.457-460.1129
Citation
P. Brosselard, V. Zorngiebel, D. Planson, S. Scharnholz, J.-P. Chante, E. Spahn, C. Raynaud, M. Lazar, "Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor ", Materials Science Forum, Vols. 457-460, pp. 1129-1132, 2004
Online since
June 2004
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