Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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1129-1132

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P. Brosselard et al., "Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor ", Materials Science Forum, Vols. 457-460, pp. 1129-1132, 2004

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June 2004

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