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Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
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Extrinsic Base Design of SiC Bipolar Transistors
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Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm² Power Density Handling Ability
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Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction Transistors
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Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor
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Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
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SiC BJT Technology for Power Switching and RF Applications
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Simple Self-Aligned Fabrication Process for...

Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction Transistors

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1125-1128

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1125

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Online since:

June 2004

Authors:

K. Dynefors, V. Desmaris, Joakim Eriksson, Per Åke Nilsson, Niklas Rorsman, Herbert Zirath

Keywords:

Junction Field Effect Transistor (JFET), Power, Silicon Carbide (SiC), SIT, Vertical

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] R.C. Clarke, R.R. Siergiej, A.K. Agarwal, C.D. Brandt, A.A. Burk, Jr.; A. Morse, P.A. Orphanos, Proc. IEEE Cornell Conf. Advanced Concepts in High Speed Semiconductor Device and Circuits (1995), p.47.

DOI: 10.1109/cornel.1995.482419

[2] J.P. Henning, A. Przadka, M.R. Melloch and J.A. Cooper, Jr.; IEEE Electron Device Letters, Vol. 21 (2000), p.2.

[3] R.C. Clarke and J.W. Palmour, SiC Microwave Power Technologies, Proceedings of the IEEE, Vol. 90 (2002), p.984.

[4] P. Leerungnawarat, High-density Plasma Etching of Silicon Carbide, Master Thesis, University of Florida, (1999).

[5] J.J. Wang, H. Cho, E.S. Lambers, S.J. Pearton, M. Östling, C. -M. Zetterling, J.M. Grow, F. Ren, R.J. Schul, and J. Han, MRS Symp. Proc., Vol. 512 (1998), p.507.