Extrinsic Base Design of SiC Bipolar Transistors

Erik Danielsson; Martin Domeij; Carl Mikael Zetterling; Mikael Östling; Adolf Schöner

doi:10.4028/www.scientific.net/MSF.457-460.1117

Paper Titles

Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes
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High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
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4,308V, 20.9 mΩ-cm² 4H-SiC MPS Diodes Based on a 30μm Drift Layer
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Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
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Extrinsic Base Design of SiC Bipolar Transistors
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Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm² Power Density Handling Ability
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Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction Transistors
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Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor
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Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Extrinsic Base Design of SiC Bipolar Transistors

Extrinsic Base Design of SiC Bipolar Transistors

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Materials Science Forum (Volumes 457-460)

Pages:

1117-1120

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1117

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Online since:

June 2004

Authors:

Erik Danielsson, Martin Domeij, Carl Mikael Zetterling, Mikael Östling, Adolf Schöner

Keywords:

Bipolar Transistors, Mobility, Regrowth

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References

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