Extrinsic Base Design of SiC Bipolar Transistors

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1117-1120

Citation:

E. Danielsson et al., "Extrinsic Base Design of SiC Bipolar Transistors", Materials Science Forum, Vols. 457-460, pp. 1117-1120, 2004

Online since:

June 2004

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DOI: https://doi.org/10.1016/s0038-1101(02)002186

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[10] [15] 1020.

200 400 600 800 1000 1200 Acceptor concentration (cm -3) electron mobility (cm 2/Vs) Original New.

[10] [15] [10] [20] [0] [20] [40] [60] [80] 100 120 Donor concentration (cm-3) hole mobility (cm 2/Vs) Original New a) b).

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