Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1133-1136

Citation:

A. M. Strel'chuk et al., "Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation ", Materials Science Forum, Vols. 457-460, pp. 1133-1136, 2004

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June 2004

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[1] N.S. Savkina, A.A. Lebedev, D.V. Davydov, A.M. Strel'chuk, A.S. Tregubova, C. Raynaud, J-P. Chante, M.L. Locatelli et al.: Mat. Sci. Engin. B77 (2000), p.50.

[2] A.A. Lebedev, A.S. Tregubova, V.E. Chelnokov, M.P. Scheglov and A.A. Glagovskii: Mat. Sci. Engin. B46 (1997), p.291.