Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1133-1136

DOI:

10.4028/www.scientific.net/MSF.457-460.1133

Citation:

A. M. Strel'chuk et al., "Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation ", Materials Science Forum, Vols. 457-460, pp. 1133-1136, 2004

Online since:

June 2004

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