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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Characteristics of 6H-SiC Bipolar JTE Diodes...

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1133-1136

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1133

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Cite this paper

Online since:

June 2004

Authors:

Anatoly M. Strel'chuk, Alexander A. Lebedev, D.V. Davydov, N.S. Savkina, Alexey N. Kuznetsov, M. Valakh, V.S. Kiselev, B.N. Romanyuk, Christophe Raynaud, Jean-Pierre Chante, Marie Laure Locatelli

Keywords:

Annealing, Current-Voltage Characteristic, High Temperature Devices, Implantation, JTE Protection, Sublimation Epitaxy

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Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] N.S. Savkina, A.A. Lebedev, D.V. Davydov, A.M. Strel'chuk, A.S. Tregubova, C. Raynaud, J-P. Chante, M.L. Locatelli et al.: Mat. Sci. Engin. B77 (2000), p.50.

[2] A.A. Lebedev, A.S. Tregubova, V.E. Chelnokov, M.P. Scheglov and A.A. Glagovskii: Mat. Sci. Engin. B46 (1997), p.291.