Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1145-1148

Citation:

P. A. Ivanov et al., "Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs", Materials Science Forum, Vols. 457-460, pp. 1145-1148, 2004

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June 2004

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[2] P.A. Ivanov, M.E. Levinshtein, A.K. Agarwal, J.W. Palmour. Semicond. Sci. Technol., vol. 16 (2001), p.521.

[3] P.A. Ivanov, M.E. Levinshtein, S.L. Rumyantsev, S-H. Ryu, A.K. Agarwal, J.W. Palmour. Sol. -State Electron., vol. 46 (2002), p.567.

[4] J.R. Hauser. IEEE Trans ED vol. 11 (1964), p.238.

[5] Properties of advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe. Ed. by Levinshtein ME, Rumyantsev SL, Shur MS. John Wiley & Sons, (2001).

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