Paper Titles

Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor
p.1129

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
p.1133

The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control Applications
p.1137

SiC BJT Technology for Power Switching and RF Applications
p.1141

Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs
p.1145

High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors
p.1149

Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits
p.1153

1,530V, 17.5mΩcm² Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization
p.1157

4,340V, 40 mΩcm² Normally-Off 4H-SiC VJFET
p.1161

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Base Current Gain of Power (1800 V, 10 A) 4H-SiC...

Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1145-1148

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1145

Citation:

Cite this paper

Online since:

June 2004

Authors:

Pavel A. Ivanov, Michael E. Levinshtein, Anant K. Agarwal, John W. Palmour, Sei Hyung Ryu

Keywords:

Base Current Gain, Bipolar Junction Transistor (BJT), Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] S-H. Ryu, A.K. Agarwal, R. Singh, J.W. Palmour. IEEE Trans. EDL, vol. 22 (2001), p.124.

[2] P.A. Ivanov, M.E. Levinshtein, A.K. Agarwal, J.W. Palmour. Semicond. Sci. Technol., vol. 16 (2001), p.521.

[3] P.A. Ivanov, M.E. Levinshtein, S.L. Rumyantsev, S-H. Ryu, A.K. Agarwal, J.W. Palmour. Sol. -State Electron., vol. 46 (2002), p.567.

[4] J.R. Hauser. IEEE Trans ED vol. 11 (1964), p.238.

[5] Properties of advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe. Ed. by Levinshtein ME, Rumyantsev SL, Shur MS. John Wiley & Sons, (2001).