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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460SiC BJT Technology for Power Switching and RF...

SiC BJT Technology for Power Switching and RF Applications

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1141-1144

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1141

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Online since:

June 2004

Authors:

Anant K. Agarwal, Sei Hyung Ryu, Craig Capell, Jim Richmond, John W. Palmour, Howard Bartlow, T. Paul Chow, Skip Scozzie, W. Tipton, Stephen Baynes, Kenneth A. Jones

Keywords:

Bipolar Junction Transistor (BJT), Power, RF, Switching, UHF

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] S. Ryu, A. K. Agarwal, R. Singh, and J. W. Palmour, 1800 V, 3. 8 A bipolar junction transistors in 4H-SiC, Technical Digest of 58th Device Research Conf. pp.133-134. June 19-21, 2000, Denver, CO.

DOI: 10.1109/drc.2000.877120

[2] Y. Luo, L. Fursin, J. H. Zhao, Demonstration of 4H-SiC power bipolar junction transistors, Electronics Letters, vol. 36, no. 17, 17 Aug. 2000, pp.1496-1497.

DOI: 10.1049/el:20001059

[3] C-F Huang and J. A. Cooper, Jr, 4H-SiC npn bipolar junction transistors with BV CEO > 3, 200 V, " Proc. of the 14th Int, l Symp. on Power Semi. Dev. and ICs, pp.57-60. June 4-7, 2002. Santa Fe, NM.

DOI: 10.1109/ispsd.2002.1016170

[4] S-H. Ryu, A. K. Agarwal, R. Singh, and J. W. Palmour, 1800 V NPN bipolar junction transistors in 4H-SiC, IEEE Electron Device Letters, vol. 22, no. 3, March 2001, pp.124-126.

DOI: 10.1109/55.910617

[5] Y. Tang, J. B. Fedison, T. P. Chow, High-voltage implanted-emitter 4H-SiC BJTs, IEEE Electron Device Letters, vol. 23, no. 1, Jan. 2002, pp.16-18.

DOI: 10.1109/55.974798