SiC BJT Technology for Power Switching and RF Applications

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1141-1144

Citation:

A. K. Agarwal et al., "SiC BJT Technology for Power Switching and RF Applications", Materials Science Forum, Vols. 457-460, pp. 1141-1144, 2004

Online since:

June 2004

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DOI: https://doi.org/10.1109/drc.2000.877120

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DOI: https://doi.org/10.1109/ispsd.2002.1016170

[4] S-H. Ryu, A. K. Agarwal, R. Singh, and J. W. Palmour, 1800 V NPN bipolar junction transistors in 4H-SiC, IEEE Electron Device Letters, vol. 22, no. 3, March 2001, pp.124-126.

DOI: https://doi.org/10.1109/55.910617

[5] Y. Tang, J. B. Fedison, T. P. Chow, High-voltage implanted-emitter 4H-SiC BJTs, IEEE Electron Device Letters, vol. 23, no. 1, Jan. 2002, pp.16-18.

DOI: https://doi.org/10.1109/55.974798

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