Paper Titles

Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm² Power Density Handling Ability
p.1121

Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction Transistors
p.1125

Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor
p.1129

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
p.1133

The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control Applications
p.1137

SiC BJT Technology for Power Switching and RF Applications
p.1141

Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs
p.1145

High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors
p.1149

Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits
p.1153

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460The First 4H-SiC BJT-Based 20 kHz, 7HP PWM...

The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control Applications

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1137-1140

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1137

Citation:

Cite this paper

Online since:

June 2004

Authors:

Jian Hui Zhao, Jian Hui Zhang, Yan Bin Luo, X. Hu, Yu Zhu Li, H. Yu, J. Lai, Peter Alexandrov, Leonid Fursin, Larry X. Li, J. Carter, M. Weiner

Keywords:

Gate Drive, Inverter, SiC BJT, SiC Diode

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: