High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1149-1152

DOI:

10.4028/www.scientific.net/MSF.457-460.1149

Citation:

J. H. Zhang et al., "High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors", Materials Science Forum, Vols. 457-460, pp. 1149-1152, 2004

Online since:

June 2004

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$35.00

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