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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460High Power (500V-70A) and High Gain(44-47) 4H-SiC...

High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1149-1152

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1149

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Online since:

June 2004

Authors:

Jian Hui Zhang, Peter Alexandrov, Jian Hui Zhao

Keywords:

Bipolar Junction Transistor (BJT), Power Transistor, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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